Using a simple barium (Ba) evaporation technique in a molecular oxygen background, it is now possible to grow crystalline BaO films on GaAs (100) substrates even at room temperature. Such a BaO buffer ...
Abstract: In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications. C-V ...
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