Abstract: A novel nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD) is reported. The nitride films deposited by HD-ICP-CVD ...
Remote ICP-CVD system with borazine mass flow controller (MFC) for precise control of borazine flow. The a-BN films were grown on Si substrates at 400 °C. Disclaimer: AAAS and EurekAlert! are not ...
Chemical vapour deposition (CVD) of silicon carbonitride (SiCN) films encompasses a range of techniques in which volatile organosilicon precursors are decomposed—thermally or via plasma—to deposit ...
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