Abstract: IGBT switching and current control technique has been developed using VME system. This technique uses VME digital input and output (DIO) card, IP330 analog in (AI) module and VME interrupt ...
Abstract: The insulated gate bipolar transistor (IGBT) and gallium nitride (GaN) hybrid half-bridge (HHB) circuit operating in fractional power processing (FPP) mode combines the advantages of silicon ...
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