N-MOS and P-MOS transistors are analogous respectively to NPN and PNP transistors but their conduction mechanism is based completely on one type of carrier: holes for the PMOS and electrons for the ...
The article presents a synthesis method to design electrical circuit elements with fractional-order impedance, referred to as a Fractional-Order Element (FOE) or Fractor, that can be implemented by ...
The common source amplifier is one of three basic single-stage amplifier topologies. The MOS version functions as an inverting voltage amplifier. The gate terminal of the transistor serves as the ...
In this work, we demonstrate the design and room temperature operation of FETs based on a tunnel-contacted (TC) MoS 2 channel. The tunnel barrier insulating layer is implemented by an ultra-thin ...
Abstract: The possibility of fast label-free detection of biomolecules using electronic devices has resulted in an increased focus on developing such biosensing devices and optimizing their structure ...
Abstract: This paper reports a new Dynamic Threshold Voltage MOS (DT-MOS) transistor using foundry 90-nm CMOS process. Adopting the sub-circuit of the source follower, the proposed device could be ...
(Nanowerk News) The National Institute for Advanced Industrial Science and Technology (AIST) and Tohoku University have succeeded in manufacturing a high-performance upright-type double gate MOS ...
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