Abstract: Further insight into strained layer relaxation processes have been achieved in this work. Effects of surface roughness, dislocation velocities, and dislocation nucleation have been ...

Abstract: A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some ...

Today’s commercial SiC substrates are riddled with these atomic-scale imperfections, with thousands threading through each ...

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China Institute of Advanced Semiconductors & Zhejiang Provincial Key ...

Wide bandgap (WBG) semiconductors are essential to our technology future. Power electronics made with WBG components overcome the upper limits on temperature, frequency, and voltage that apply to ...

This repository contains some scripts to compute the deformation field around a surface threading dislocation (edge and screw) in an isotropic medium. It can also generate input .h5 file for the ...

I am very proud to announce the publication of my article investigating the impact of point defects (PDs) in III-nitride light-emitting structures (e.g., the materials used for white LEDs). The story ...