Today’s commercial SiC substrates are riddled with these atomic-scale imperfections, with thousands threading through each ...

Abstract: Further insight into strained layer relaxation processes have been achieved in this work. Effects of surface roughness, dislocation velocities, and dislocation nucleation have been ...

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China Institute of Advanced Semiconductors & Zhejiang Provincial Key ...

Wide bandgap (WBG) semiconductors are essential to our technology future. Power electronics made with WBG components overcome the upper limits on temperature, frequency, and voltage that apply to ...

This repository contains some scripts to compute the deformation field around a surface threading dislocation (edge and screw) in an isotropic medium. It can also generate input .h5 file for the ...